december 2010 fdd4243_f085 p-ch annel powertrench ? mosfet ?2010 fairchild semiconductor corporation fdd4243_f085 rev. c www.fairchildsemi.com 1 fdd4243_f085 p-channel powertrench ? mosfet -40v, -14a, 64 m features ? typ r ds(on) = 36m at v gs = -10v, i d = -6.7a ? typ r ds(on) = 48m at v gs = -4.5v, i d = -5.5a ? typ q g(tot) = 21nc at v gs = -10v ? high performance trench tec hnology for extremely low r ds(on) ? inverter ? power supplies ? rohs compliant applications ? qualified to aec q101
fdd4243_f085 p-ch annel powertrench ? mosfet fdd4243_f085 rev. c www.fairchildsemi.com 2 mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage -40 v v gs gate to source voltage 20 v i d drain current continuous (t c < 130 o c, v gs = 10v) -14 a pulsed see figure 4 e as single pulse avalanche energe (note 1) 84 mj p d power dissipation 50 w dreate above 25 o c0.34w/ o c t j , t stg operating and storage temperature -55 to +175 o c r jc maximum thermal resistance junction to case 3 o c/w r ja maximum thermal resistance junction to ambient to-252, 1in 2 copper pad area 40 o c/w package marking and ordering information device marking device package reel size tape width quantity fdd4243 fdd4243_f085 to252 13? 12mm 2500 units electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = -250 a, v gs = 0v -40 - - v bv dss t j id = -250 a, referenced to 25c - -32 - mv/c i dss zero gate voltage drain current v ds = -32v t j = 125 o c ---1 a ---100 i gss gate to source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = -250 a -1.4 -1.6 -3.0 v v gs(th) t j gate to source threshold voltage temperature coefficient id = ?250 a, referenced to 25c - 4.7 - mv/c r ds(on) drain to source on resistance i d = -6.7a, v gs = -10v - 36 44 m i d = -5.5a, v gs = -4.5v - 48 64 i d = -6.7a, v gs = -10v, t j = 150 o c - 57 70 g fs forward transconductance i d = ?6.7a, v ds = ?5v, - 23 - s c iss input capacitance v ds = -20v, v gs = 0v, f = 1mhz - 1165 1550 pf c oss output capacitance - 165 220 pf c rss reverse transfer capacitance - 90 135 pf r g gate resistance f = 1mhz - 4 - q g(tot) total gate charge v dd = -20v, v gs = -10v i d = -6.7a -2129nc q gs gate to source gate charge - 3.4 - nc q gd gate to drain ?miller? charge - 4 - nc breakdown voltage temperature coefficient
fdd4243_f085 p-ch annel powertrench ? mosfet fdd4243_f085 rev. c www.fairchildsemi.com 3 electrical characteristics t j = 25 o c unless otherwise noted switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units t d(on) turn-on delay time v dd = -20v, i d = -6.7a v gs = -10v, r gen = 6 - 6 12 ns t r rise time - 15 26 ns t d(off) turn-off delay time - 22 35 ns t f fall time - 7 14 ns v sd source to drain diode voltage i sd = -6.7a, v gs =0v - -0.86 -1.2 v t rr reverse recovery time i sd = -6.7a, di sd /dt = 100a/ s -2943ns q rr reverse recovery charge - 30 44 nc this product has been designed to meet the extreme test conditi ons and environment demanded by the automotive industry. for a copy of the requirements, see aec q101 at: http://www.aecouncil.com/ all fairchild semiconduc tor products are manufactured, assembled and t ested under iso9000 and qs9000 quality systems certification. notes: 1: starting t j = 25c, l = 3mh, i as = 7.5a, v gs = 10v, v dd = 40v during the inductor charging time and 0v during the time in avalanche.
fdd4243_f085 p-ch annel powertrench ? mosfet fdd4243_f085 rev. c www.fairchildsemi.com 4 typical characteristics figure 1. normalized po wer dissipation vs case temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation multiplier t c , case temperature ( o c ) figure 2. maximum continuous drain current vs case temperature 25 50 75 100 125 150 175 0 10 20 30 current limited by package r t jc = 3 o c/w v gs = -4.5v v gs = -10v -i d , drain current (a) t c , case temperature ( o c ) figure 3. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.001 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z t jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 v gs = 10v single pulse -i dm , peak current (a) t, rectangular pulse duration(s) t c = 25 o c i = i 25 175 - t c 150 for temperatures above 25 o c derate peak current as follows:
fdd4243_f085 p-ch annel powertrench ? mosfet fdd4243_f085 rev. c www.fairchildsemi.com 5 figure 5. 11 09 0 0.1 1 10 100 300 100us 1ms 10ms -i d , drain current (a) -v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c dc forward bias safe operating area 10.11 10100 1 10 40 starting t j = 150 o c starting t j = 25 o c -i as , avalanche current (a) t av , time in avalanche (ms) t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r z 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. 0123456 0 10 20 30 40 50 60 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 p s duty cycle = 0.5% max v dd = -5v -i d , drain current (a) -v gs , gate to source voltage (v) transfer characteristics figure 8. 01234 0 10 20 30 40 50 60 v gs = -5v v gs = -3v v gs = -4v v gs = -4.5v v gs = -6v v gs = -10v pulse duration = 80 p s duty cycle = 0.5% max -v ds , drain to source voltage (v) -i d , drain current (a) saturation characteristics figure 9. 24681 0 20 40 60 80 100 120 140 160 180 200 i d = -6.7a pulse duration = 80 p s duty cycle = 0.5% max r ds(on) , drain to source on-resistance ( m : ) -v gs , gate to source voltage ( v ) t j = 25 o c t j = 175 o c drain to source on-res i stance variation vs gate to source voltage figure 10. -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 pulse duration = 80 p s duty cycle = 0.5% max i d = -6.7a v gs = -10v normalized drain to source on-resistance t j , junction temperature ( o c ) normalized drain to source on resistance vs junction temperature typical characteristics
fdd4243_f085 p-ch annel powertrench ? mosfet fdd4243_f085 rev. c www.fairchildsemi.com 6 figure 11. -80 -40 0 40 80 120 160 200 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v gs = v ds i d = -250 p a normalized gate threshold voltage t j , junction temperature ( o c ) normalized gate threshold voltage vs junction temperature figure 12. normalized drain to source br eakdown voltage vs junction temperature -80 -40 0 40 80 120 160 200 0.90 0.95 1.00 1.05 1.10 1.15 i d = -250 p a normalized drain to source breakdown voltage t j , junction temperature ( o c ) figure 13. 0.1 1 10 100 10 100 1000 5000 f = 1mhz v gs = 0v c rss c oss c iss capacitance (pf) -v ds , drain to source voltage ( v ) capacitance vs drain to source voltage figure 14. 0 4 8 12162024 0 2 4 6 8 10 v dd = -30v v dd = -10v -v gs , gate to source voltage(v) q g , gate charge(nc) v dd = -20v gate charge vs gate to source voltage typical characteristics
fdd4243_f085 rev. c www.fairchildsemi.com 7 fdd4243_f085 p-channel powertrench ? mosfet trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neit her does it convey any license under its pat ent rights, nor the rights of others. these specifications do not expand the term s of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life su pport device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? auto-spm? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? optihit? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? the right technology for your success? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? trifault detect? truecurrent?* serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specificati ons for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time withou t notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy . fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in t he industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts exper ience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing de lays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fa irchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our custom ers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i51 ?
|
